K4A8G165WC-BCWE 8Gb DDR4 SDRAM Samsung electronic components shops

The 8Gb DDR4 SDRAM C-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications.

The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) V DDQ and 2.5V (2.375V~2.75V) V PP

The 8Gb DDR4 C-die device is available in 96ball FBGAs(x16).

JEDEC standard 1.2V (1.14V~1.26V)
VDDQ = 1.2V (1.14V~1.26V)
VPP = 2.5V (2.375V~2.75V)
800 MHz f CK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
8 Banks (2 Bank Groups)
Programmable CAS Latency (posted CAS): 10,11,12,13,14,15,16,17,18,19,20
Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12 (DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400) and 14,18 (DDR4-2666)
8-bit pre-fetch
Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
Bi-directional Differential Data-Strobe
Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than T CASE 85°C, 3.9us at 85°C <TCASE < 95°C
Connectivity Test Mode (TEN) is Supported
Asynchronous Reset
Package: 96 balls FBGA – x16
All of Lead-Free products are compliant for RoHS
All of products are Halogen-free
CRC (Cyclic Redundancy Check) for Read/Write data security
Command address parity check
DBI (Data Bus Inversion)
Gear down mode
POD (Pseudo Open Drain) interface for data input/output
Internal VREF for data inputs
External VPP for DRAM Activating Power
PPR and sPPR is supported