Samsung DDR4 4Gb K4A4G165WF-BCTD000 electronic component wholesalers

Density: 4Gb
Organization: 256M x 16
Speed: 2666 Mbps
Voltage: 1.2 V
Temperature: 0 ~ 85 °C
Package: 96 FBGA

The 4Gb DDR4 SDRAM F-die is organized as a 32Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/pin (DDR4-3200) for general applications.

The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) V DDQ and 2.5V (2.375V~2.75V) V PP .

The 4Gb DDR4 F-die device is available in 96ball FBGAs(x16).

JEDEC standard 1.2V (1.14V~1.26V)
V DDQ = 1.2V (1.14V~1.26V)
V PP = 2.5V (2.375V~2.75V)
800 MHz f CK for 1600Mb/sec/pin,933 MHz f CK for 1866Mb/sec/pin,
1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin,
1333MHz fCK for 2666Mb/sec/pin , 1600MHz fCK for 3200Mb/sec/pin
8 Banks (2 Bank Groups)
Programmable CAS Latency (posted CAS):
10,11,12,13,14,15,16,17,18,19,20,22,24
Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12(DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400), 14,18 (DDR42666) and 16,20 (DDR4-3200)
8-bit pre-fetch
Burst Length: 8, 4 with tCCD = 4 which does not allow seamless reador write [either On the fly using A12 or MRS]
Bi-directional Differential Data-Strobe
Internal (self) calibration: Internal self calibration through ZQ pin(RZQ: 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at
85°C < TCASE < 95°C

Asynchronous Reset
Package: 96 balls FBGA – x16
All of Lead-Free products are compliant for RoHS
All of products are Halogen-free
CRC (Cyclic Redundancy Check) for Read/Write data security
Command address parity check
DBI (Data Bus Inversion)
Gear down mode
POD (Pseudo Open Drain) interface for data input/output
Internal VREF for data inputs
External VPP for DRAM Activating Power
hPPR is supported