RS512M32LX4D2BNR-53BT 2GB LPDDR4/4X FBGA200 Rayson

• Ultra-low-voltage core and I/O power supplies
– VDD1 = 1.70-1.95V; 1.80V nominal
– VDD2 = 1.06-1.17V; 1.10V nominal
– VDDQ = 0.57-0.65V; 0.60V nominal Or VDDQ = 1.06-1.17V; 1.10V nominal

• Frequency range
– 1866-10 MHz (data rate range per pin:3733-20Mbp/s)

• 16n prefetch DDR architecture

• 8 internal banks per channel for concurrent operation

• Single-data-rate CMD / ADR entry

• Bidirectional / differential data strobe per byte lane

• Programmable READ and WRITE latencies (RL / WL)

• Programmable and on-the-fly burst lengths (BL = 16, 32)

• Directed per-bank refresh for concurrent bank operation and ease of command scheduling

• Up to 8.53 GB / s per die x16 channel

• On-chip temperature sensor to control self refresh rate

• Partial-array self refresh (PASR)

• Selectable output drive strength (DS)

• Clock-stop capability

• RoHS-compliant, “green” packaging

• VDD1/VDD2/VDDQ: 1.80V/1.10V/0.60V or 1.10V

• Array configuration
– 512Meg x 32 (2 channels x 16 I/O)
– 512M16 x 2 die in package

• FBGA “green” package
– 200-ball FBGA (10mm x15mm x0.85±0.1mm)

• Speed grade,cycle time
– 535ps@ RL = 32/36

• Operating temperature range

Related applications
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