Rayson RS1G32LX4D4BNR-53BT

• Ultra-low-voltage core and I/O power supplies

– VDD1 = 1.70-1.95V; 1.80V nominal

– VDD2 = 1.06-1.17V; 1.10V nominal

– VDDQ = 0.57-0.65V; 0.60V nominal Or VDDQ = 1.06-1.17V; 1.10V nominal

• Frequency range

– 1866-10 MHz (data rate range per pin:3733-20Mbp/s)

• 16n prefetch DDR architecture
• 8 internal banks per channel for concurrent operation
• Single-data-rate CMD / ADR entry
• Bidirectional / differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL / WL)
• Programmable and on-the-fly burst lengths (BL = 16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• Up to 8.53 GB / s per die x16 channel
• On-chip temperature sensor to control self refresh rate
• Partial-array self refresh (PASR)
• Selectable output drive strength (DS)
• Clock-stop capability
• RoHS-compliant, “green” packaging
• VDD1/VDD2/VDDQ: 1.80V/1.10V/0.60V or 1.10V
• Array configuration

– 1 Gig x 32 (2 channels x 16 I/O)

– 512M16 x 4 die in package

• FBGA “green” package

– 200-ball FBGA (10mm x15mm x1.07mm Max)

• Speed grade,cycle time

– 535ps@ RL = 32/36

• Operating temperature range

– -25°C to + 85°C

tablets, smart TVs, mobile phones, educational electronics, smart wearables, car, box.