3GB LPDDR4/4X RS768M32LP4D2BDS-53BT RAYSON

Ultra-low-voltage core and I/O power supplies
– VDD1 = 1.70-1.95V; 1.80V nominal
– VDD2 = 1.06-1.17V; 1.10V nominal
– VDDQ = 0.57-0.65V; 0.60V nominal Or VDDQ = 1.06-1.17V; 1.10V nominal

Frequency range
– 1866-10 MHz (data rate range per pin:3733-20Mbp/s)

16n prefetch DDR architecture

8 internal banks per channel for concurrent operation

Single-data-rate CMD / ADR entry

Bidirectional / differential data strobe per byte lane

Programmable READ and WRITE latencies (RL / WL)

Programmable and on-the-fly burst lengths (BL = 16, 32)

Directed per-bank refresh for concurrent bank operation and ease of command scheduling

Up to 8.53 GB / s per die x16 channel

On-chip temperature sensor to control self refresh rate

Partial-array self refresh (PASR)

Selectable output drive strength (DS)

Clock-stop capability

RoHS-compliant, “green” packaging

VDD1/VDD2/VDDQ: 1.80V/1.10V/0.60V or 1.10V

Array configuration
– 768Meg x 32 (2 channels x 16 I/O)
– 1536Meg x 32 (2 channels x 16 I/O)
– 1G16 x 2 die in package
– 1G16 x 4 die in package

FBGA “green” package
– 200-ball FBGA (10mm x14.5mm x0.95mm Max)
– 200-ball FBGA (10mm x14.5mm x1.10mm Max)

Speed grade,cycle time
– 535ps@ RL = 32/36

Operating temperature range
– -25°C to + 85°C

Related applications
flat
Smart TV
mobile phone
Education Electronics
Intelligent Wearing
vehicle
Box