Winbond W9864G6KH-6I 1M  4 BANKS  16 BITS SDRAM

GENERAL DESCRIPTION  

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as  1M words  4 banks  16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per  second. For different application, W9864G6KH is sorted into the following speed grades: -5, -6, -6I  and -7. The -5 grade parts can run up to 200MHz/CL3. The -6 and -6I grade parts can run up to  166MHz/CL3 (the -6I industrial grade which is guaranteed to support -40°C ~ 85°C). The -7 grade  parts can run up to 143MHz/CL3 and with tRP = 18nS.  

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be  accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE  command. Column addresses are automatically generated by the SDRAM internal counter in burst  operation. Random column read is also possible by providing its address at each clock cycle.  

The multiple bank nature enables interleaving among internal banks to hide the precharging time.By  having a programmable Mode Register, the system can change burst length, latency cycle, interleave  or sequential burst to maximize its performance. W9864G6KH is ideal for main memory in high  performance applications.

FEATURES  

 3.3V ± 0.3V for -5, -6 and -6I speed grades power supply  

 2.7V~3.6V for -7 speed grades power supply  

 Up to 200 MHz Clock Frequency  

 1,048,576 words  4 banks  16 bits organization  

 Self Refresh Current: Standard and Low Power  

 CAS Latency: 2 and 3  

 Burst Length: 1, 2, 4, 8 and full page   Sequential and Interleave Burst  

 Byte Data Controlled by LDQM, UDQM  

 Auto-precharge and Controlled Precharg  

 Burst Read, Single Writes Mode  

 4K Refresh Cycles/64 mS  

 Interface: LVTTL  

 Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant