Winbond W631GG6MB-12 8M  8 BANKS  16 BIT DDR3 SDRAM

GENERAL DESCRIPTION

The W631GG6MB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words  8 banks  16 bits.

This device achieves high speed transfer rates up to 2133 MT/s (DDR3-2133) for various applications.This device is sorted into the following speed grades: -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J,12J and 15J.

The -09 ,09I and 09J speed grades are compliant to the DDR3-2133 (14-14-14) specification (The 09I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C, the 09J industrial plus grade which is guaranteed to support -40°C ≤ TCASE ≤ 105°C).

The -11 ,11I and 11J speed grades are compliant to the DDR3-1866 (13-13-13) specification (The 11I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C, the 11J industrial plus grade which is guaranteed to support -40°C ≤ TCASE ≤ 105°C).

The -12, 12I and 12J speed grades are compliant to the DDR3-1600 (11-11-11) specification (The 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C, the 12J industrial plus grade which is guaranteed to support -40°C ≤ TCASE ≤ 105°C).

The -15, 15I and 15J speed grades are compliant to the DDR3-1333 (9-9-9) specification (The 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C, the 15J industrial plus grade which is guaranteed to support -40°C ≤ TCASE ≤ 105°C).

The W631GG6MB is designed to comply with the following key DDR3 SDRAM features such as

posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and

asynchronous reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion.

FEATURES

 Power Supply: VDD, VDDQ = 1.5V ± 0.075V

 Double Data Rate architecture: two data transfers per clock cycle

 Eight internal banks for concurrent operation

 8 bit prefetch architecture

 CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14

 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly

(OTF)

 Programmable read burst ordering: interleaved or nibble sequential

 Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data

 Edge-aligned with read data and center-aligned with write data

 DLL aligns DQ and DQS transitions with clock

 Differential clock inputs (CK and CK#)

 Commands entered on each positive CK edge, data and data mask are referenced to both edges of

a differential data strobe pair (double data rate)

 Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command,

address and data bus efficiency

 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)

 Auto-precharge operation for read and write bursts

 Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)

 Precharged Power Down and Active Power Down

 Data masks (DM) for write data

 Programmable CAS Write Latency (CWL) per operating frequency

 Write Latency WL = AL + CWL

 Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence

 System level timing calibration support via write leveling and MPR read pattern

 ZQ Calibration for output driver and ODT using external reference resistor to ground

 Asynchronous RESET# pin for Power-up initialization sequence and reset function

 Programmable on-die termination (ODT) for data, data mask and differential strobe pairs

 Dynamic ODT mode for improved signal integrity and preselectable termination impedances during

writes

 2K Byte page size

 Interface: SSTL_15

 Packaged in VFBGA 96 Ball (7.5x13 mm2 with thickness of 1.0 mm) - (Window BGA Type), using

lead free materials with RoHS compliant