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/Winbond W631GG6KB-12 8M 16BIT DDR3 SDRAM

Winbond W631GG6KB-12 8M 16BIT DDR3 SDRAM

W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I,

15A and 15K. The -11 speed grade is compliant to the DDR3-1866 (13-13-13) specification. The -12,

12I, 12A and 12K speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I

industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15, 15I, 15A and 15K

speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is

guaranteed to support -40°C ≤ TCASE ≤ 95°C).


  • Brand:

    Winbond
  • Product Details

GENERAL DESCRIPTION


The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words  8 banks  16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various

applications. W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A and 15K. The -11 speed grade is compliant to the DDR3-1866 (13-13-13) specification. The -12,12I, 12A and 12K speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15, 15I, 15A and 15K speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C).


The automotive grade parts temperature, if offered, has two simultaneous requirements: ambient temperature (TA) surrounding the device cannot be less than -40°C or greater than +95°C (for 12A and 15A), +105°C (for 12K and 15K), and the case temperature (TCASE) cannot be less than -40°C or greater than +95°C (for 12A and 15A), +105°C (for 12K and 15K). JEDEC specifications require the refresh rate to double when TCASE exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when TCASE is < 0°C or > +85°C.


The W631GG6KB is designed to comply with the following key DDR3 SDRAM features such as

posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and

asynchronous reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion.


FEATURES


 Power Supply: VDD, VDDQ = 1.5V ± 0.075V

 Double Data Rate architecture: two data transfers per clock cycle

 Eight internal banks for concurrent operation

 8 bit prefetch architecture

 CAS Latency: 6, 7, 8, 9, 10, 11 and 13

 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)

 Programmable read burst ordering: interleaved or nibble sequential

 Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data

 Edge-aligned with read data and center-aligned with write data

 DLL aligns DQ and DQS transitions with clock

 Differential clock inputs (CK and CK#)

 Commands entered on each positive CK edge, data and data mask are referenced to both edges ofa differential data    strobe pair (double data rate)

 Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command,address and data bus    efficiency

 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)

 Auto-precharge operation for read and write bursts

 Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)

 Precharged Power Down and Active Power Down

 Data masks (DM) for write data

 Programmable CAS Write Latency (CWL) per operating frequency

 Write Latency WL = AL + CWL

 Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence

 System level timing calibration support via write leveling and MPR read pattern

 ZQ Calibration for output driver and ODT using external reference resistor to ground

 Asynchronous RESET# pin for Power-up initialization sequence and reset function

 Programmable on-die termination (ODT) for data, data mask and differential strobe pairs

 Dynamic ODT mode for improved signal integrity and preselectable termination impedances during

   writes

 2K Byte page size

 Interface: SSTL_15

 Packaged in WBGA 96 Ball (9X13 mm2

   ), using lead free materials with RoHS compliant


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