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/Winbond W25M02GVZEIG 3V 2G-BIT SERIAL SLC NAND FLASH MEMORY WITH

Winbond W25M02GVZEIG 3V 2G-BIT SERIAL SLC NAND FLASH MEMORY WITH

DUAL/QUAD SPI

BUFFER READ & CONTINUOUS READ

CONCURRENT OPERATIONS 


  • Brand:

    Winbond
  • Product Details

GENERAL DESCRIPTIONS 


The W25M02GV (2 x 1G-bit) Serial MCP (Multi Chip Package) Flash memory is based on the W25N

Serial SLC NAND SpiFlash® series by stacking two individual W25N01GV die into a standard 8-pin

package. It offers the highest memory density for the low pin-count package, as well as Concurrent

Operations in Serial Flash memory for the first time. The W25M SpiStack® series is ideal for small form

factor system designs, and applications that demand high Program/Erase data throughput. All W25N

SpiFlash family devices are offered in space-saving packages which were impossible to use in the past

for the typical NAND flash memory. 


The SpiStack® product series introduces a new “Software Die Select (C2h)” instruction, and a factory

assigned “Die ID#” for each stacked die. Each W25N01GV die can be accessed independently even

though the interface is shared. The SpiStack® feature only allows a single die to be Active and have

control of the SPI interface at any given time to avoid bus contention. 


The W25M02GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial

Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies

of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and

416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. 


The W25M02GV provides a new Continuous Read Mode that allows for efficient access to the entire

memory array with a single Read command. This feature is ideal for code shadowing applications.

Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID

page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash

memory manageability, user configurable internal ECC, bad block management are also available in

W25M02GV. 


FEATURES 


 New Family of SpiFlash Memories

– W25M02GV: 2x1G-bit / 2x128M-byte

– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold

– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold

– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

– Compatible SPI serial flash commands

 Highest Performance Serial NAND Flash

– 104MHz Standard/Dual/Quad SPI clocks

– 208/416MHz equivalent Dual/Quad SPI

– 50MB/S continuous data transfer rate

– Fast Program/Erase performance

– More than 100,000 erase/program cycles(4)

– More than 10-year data retention

 Efficient “Continuous Read Mode”(1)

– Alternative method to the Buffer Read Mode

– No need to issue “Page Data Read”

   between Read commands

– Allows direct read access to the entire array

 Flexible “Concurrent Operations”

– Independent single die access

– Allows “Read while Program/Erase”

– Allows “Multi Die Program/Erase”

– Improves Program/Erase throughput

 Low Power, Wide Temperature Range

– Single 2.7 to 3.6V supply

– 25mA active, 20µA standby current

– -40°C to +85°C operating range

 Flexible Architecture with 128KB blocks

– Uniform 128K-Byte Block Erase

– Flexible page data load methods

 Advanced Features

– On chip 1-Bit ECC for memory array

– ECC status bits indicate ECC results

– bad block management and LUT(2) access

– Software and Hardware Write-Protect

– Power Supply Lock-Down and OTP protection

– 2KB Unique ID and 2KB parameter pages

– Ten 2KB OTP pages(3)

 Space Efficient Packaging

– 8-pad WSON 8x6-mm

– 16-pin SOIC 300-mil

– 24-ball TFBGA 8x6-mm

– Contact Winbond for other package options




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