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Winbond launches new QspiNAND Flash features to enhance Qualcomm® 9205 platform application competitiveness

June 17, 2020

Winbond Electronics, a global leader in semiconductor storage solutions, today announced the launch of QspiNAND Flash with new features designed specifically for Qualcomm® 9205 LTE modems.


Winbond launched the industry's first 1.8V 512Mb (64MB) QspiNAND Flash to provide designers of new mobile network NB-IoT modules with the correct storage capacity.


The president of WebFeet Research said: "By 2020, the scale of the Internet of Things will grow to 50 billion connected devices. The adoption rate of Quad SPI-NAND may increase 4 to 5 times in the next few years. Winbond’s 1.8V QspiNAND Flash is equivalent Suitable for use in the automotive and IoT industries. NB-IoT is poised to thrive in a new, connected world, with shipments expected to reach 685 million devices worldwide by 2023."


Winbond Electronics' US branch's director of the flash memory business group said: "Winbond is honored to devote itself to innovation and product differentiation, designing the QspiNAND Flash KGD solution, and getting Qualcomm Technologies to adopt it in the Qualcomm 9205 LTE master chip We will continue to work closely with Qualcomm Technologies to develop memory components to create next-generation LTE modem solutions suitable for IoT applications."


Winbond is based on traditional QSPI-NOR Flash and enters the field of QSPI-NAND Flash. Customers can freely choose code storage components according to their own needs, and expand the scale at the lowest cost. The same 6-pin signal and QSPI instruction set are used to provide the large capacity of SLC NAND Flash, and the new Continuous Read function with 104MHz read speed is used, without degrading performance.


Qualcomm Europe Inc. Vice President of Product Management said: "Qualcomm Technologies has conducted various tests and verifications on Winbond's QspiNAND Flash. Currently, it is applied to Qualcomm 9205 LTE modem in the form of a stack KGD solution, allowing OEM customers to create extremely compact appearance. System. We are honored to maintain a long-term cooperative relationship with Winbond and hope that both parties will continue to provide top-notch IoT technology solutions together."


The W25N QspiNAND Flash series devices are packaged in a space-saving 8-pin package, which is not possible with conventional SLC NAND Flash. W25N512GW is 512Mb memory, the array is divided into 32,768 programmable pages, each page is 2,112 bytes. W25N512GW provides a new Continuous Read mode, which can efficiently access the entire memory array with a single read instruction, which is an ideal choice for code shadowing applications.

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With a frequency speed of 104MHz, it can achieve Quad I/O performance equivalent to 416MHz (104MHz x 4) speed when using fast read Dual/Quad I/O instructions. The chip's built-in bad block management function makes NAND Flash easier to manage.


To meet the growing global demand for high-capacity solutions, Winbond QspiNAND Flash is manufactured at a 12-inch fab in Taichung, Taiwan. Winbond is expanding its production capacity to meet and ensure support for the expected growth of the automotive and IoT industries due to new business.


Winbond's technical director of flash memory said, "After joining the QspiNAND Flash product line, the SpiFlash series will facilitate the conversion of the existing QSPI-NOR Flash and Parallel NAND Flash to QspiNAND Flash." "Winbond has developed this new 512Mb QspiNAND Flash also provides excellent performance under cost-effective design principles."


The characteristics of 1.8V QspiNAND Flash are as follows:


Low power and working temperature covering different usage scenarios

– 1.75V ~ 1.95V power supply

– Working current 25mA, standby current 10μA, deep power down (Deep Power Down) current 1μA

– -40°C to +85°C operating temperature (technical grade)

– -40°C to +105°C operating temperature (industrial grade and car grade)


Unique memory architecture

– Page read time when ECC is enabled: 60μs

– Page writing time: 250μs (standard value)

– Block erase time: 2ms (standard value)

– Effectiveness of rapid programming/erasing

– Support OTP memory area


High-efficiency and high-reliability QspiNAND Flash

– QSPI implementation uses 46nm process technology

– Data retention for more than 10 years

– Supports data transfer rate up to 52MB per second


  Space-saving packaging

– WSON8 6x8mm

– WSON8 5x6mm

– TFBGA24 6x8mm

– KGD (good bare die)


We are Winbond agents, welcome to consult! There are more wonderful Winbond memory articles to share.<Winbond W948D6FBHX5E 256Mb Mobile LPDDR><NUVOTON ARM9 microprocessor>



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