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/W9812G6KH-6 Winbond RAM Memory Chip IC

W9812G6KH-6 Winbond RAM Memory Chip IC

FUNCTIONAL DESCRIPTION:Power Up and Initialization;Programming Mode Register;Bank Activate Command;Read and Write Access Modes;Burst Read Command.
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W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
2M words  4 banks  16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per
second (-5). To fully comply with the personal computer industrial standard, W9812G6KH is sorted
into the following speed grades: -5, -6, -6I and -75. The -5 grade parts is compliant to the 200MHz/CL3
specification. The -6/-6I grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial
grade which is guaranteed to support -40°C ≤ TA ≤ 85°C). The -75 grade parts is compliant to the
133MHz/CL3 specification.

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9812G6KH is ideal for main memory in

high performance applications.


 3.3V ± 0.3V Power Supply
 Up to 200 MHz Clock Frequency
 2,097,152 Words  4 banks  16 bits organization
 Self Refresh Mode
 CAS Latency: 2 and 3
 Burst Length: 1, 2, 4, 8 and full page
 Burst Read, Single Writes Mode
 Byte Data Controlled by LDQM, UDQM
 Power Down Mode
 Auto-precharge and Controlled Precharge
 4K Refresh Cycles/64 mS
 Interface: LVTTL
 Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

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