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/UMW AO3401A P-Channel Enhancement MOSFET

UMW AO3401A P-Channel Enhancement MOSFET

Drain-source voltage (Vdss): 30V; continuous drain current (Id) (at 25°C): 4.1A; gate-source threshold voltage: 1.3V @ 250uA; drain-source on-resistance: 65mΩ @ 4.2A ,10V; Maximum power consumption (Ta = 25°C): 350mW; Type: P-channel.

  • Brand:

    UMW
  • Product Details

Drain-source voltage (Vdss): 30V; continuous drain current (Id) (at 25°C): 4.1A; gate-source threshold voltage: 1.3V @ 250uA; drain-source on-resistance: 65mΩ @ 4.2A ,10V; Maximum power consumption (Ta = 25°C): 350mW; Type: P-channel.


■ Features  

● VDS (V) =-30V  

● ID =-4.2 A (VGS =-10V)  

● RDS(ON) < 55mΩ (VGS =-10V)  

● RDS(ON) < 70mΩ (VGS =-4.5V)  

● RDS(ON) < 120mΩ (VGS =-2.5V)

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