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  • Winbond W29N02GVSIAA

    Winbond W29N02GVSIAA 2G-BIT 3.3V NAND FLASH MEMORY

    W29N02GV  2G-BIT 3.3V  NAND FLASH MEMORYThe W29N02GV (2G-bit) NAND Flash memory provides a storage solution for embedded systems with  limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing  media data such as, voice, video, text and photos.

    Hot Tags : Winbond W29N02GVSIAA NAND FLASH MEMORY Serial flash memory Serial flash memory chip Winbond agent

  •  ST STM32F103VBT6

    MCU ST STM32F103VBT6 100P LQFP-100_14x14

    Medium-density performance line ARM-based 32-bit MCU with 64  or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces

    Hot Tags : FLASH STM32F103VBT6 ST STM32F103VBT6 MCU ST stm32f103vbt6 MCU FLASH

  • MX25L1606EM2I-12G

    MXIC FLASH MEMORY MX25L1606EM2I-12G SOIC-8_208mil

    3V, 16M-BIT [x 1/x 2]  CMOS SERIAL FLASH MEMORYKey Features  • Hold Feature  • Low Power Consumption  • Auto Erase and Auto Program Algorithms  • Additional 512 bit secured OTP for unique identifier

    Hot Tags : MXIC FLASH MEMORY MEMORY MX25L1606EM2I-12G FLASH MEMORY

  • MX25L3206EM2I-12G

    MXIC FLASH MEMORY MX25L3206EM2I-12G SOP-8

    32M-BIT [x 1 / x 2] CMOS SERIAL FLASHGENERAL DESCRIPTION  The device feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.  The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access  to the device is enabled by CS# input.  When it is in Dual Output read mode, the SI and SO pins become SIO0 and SIO1 pins for data output.  The device provides sequential read operation on whole chip.  After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page basis, or  word basis for erase command is executes on sector, or block, or whole chip basis.  To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read  command can be issued to detect completion status of a program or erase operation via WIP bit.  Advanced security features enhance the protection and security functions, please see security features section for  more details.  When the device is not in operation and CS# is high, it is put in standby mode.  The device utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after typical  100,000 program and erase cycles.

    Hot Tags : MXIC

  •  MX25L6406EM2I-12G

    MXIC FLASH MEMORY MX25L6406EM2I-12G SOIC-8_208mil

    GENERAL DESCRIPTION  The device feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.  The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access  to the device is enabled by CS# input.  When it is in Dual Output read mode, the SI and SO pins become SIO0 and SIO1 pins for data output.  The device provides sequential read operation on whole chip.  After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page basis, or  word basis for erase command is executes on sector, or block, or whole chip basis.  To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read  command can be issued to detect completion status of a program or erase operation via WIP bit.  Advanced security features enhance the protection and security functions, please see security features section for  more details.  When the device is not in operation and CS# is high, it is put in standby mode.  The device utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after typical  100,000 program and erase cycles.

    Hot Tags : MX25L6406EM2I-12G

  • MXIC FLASH MEMORY MX25L12835EMI-10G

    MXIC FLASH MEMORY MX25L12835EMI-10G SOP-16

    HIGH PERFORMANCE  SERIAL FLASH SPECIFICATION128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY

    Hot Tags : MX25L12835EMI-10G SERIAL FLASH

  • GD25Q16CSIG

    GD FLASH MEMORY GD25Q16CSIG SOP-8_208mil

    GENERAL DESCRIPTION  The GD25Q16C(16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the  Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O  data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.

    Hot Tags : GD FLASH MEMORY GD25Q16CSIG

  •  GD25Q32CSIG

    GD FLASH MEMORY GD25Q32CSIG SOP-8

    GENERAL DESCRIPTION  The GD25Q32C (32M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the  Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O  data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.

    Hot Tags : GD25Q32CSIG

  •  GD25Q64CSIG

    GD FLASH MEMORY GD25Q64CSIG SOP-8

    GENERAL DESCRIPTION  The GD25Q64C (64M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the  Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O  data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.

    Hot Tags : GD25Q64CSIG

  • GD25Q128CSIG

    GD FLASH MEMORY GD25Q128CSIG SOP8

    GENERAL DESCRIPTION   The GD25Q128C(128M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports  the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#) and I/O3 (HOLD#/  RESET#). The Dual I/O data is transferred with speed of 208Mbits/s and the Quad I/O & Quad Output data is  transferred with speed of 320Mbits/s.

    Hot Tags : GD25Q128CSIG

  • MXIC FLASH MEMORY MX25L12835FM2I-10G SOP8

    MXIC FLASH MEMORY MX25L12835FM2I-10G SOP8

    3V, 128M-BIT [x 1/x 2/x 4]  CMOS MXSMIO®   (SERIAL MULTI I/O)  FLASH MEMORY

    Hot Tags : MX25L12835FM2I-10G

  • K4B2G1646F-BYMA

    SAMSUNG DDR FLASH K4B2G1646F-BYMA 2GB

    2Gb F-die DDR3L SDRAM x1696FBGA with Lead-Free & Halogen-Free  (RoHS compliant)Products and specifications discussed herein are for reference purposes only. All information discussed  herein is provided on an "AS IS" basis, without warranties of any kind.  This document and all information discussed herein remain the sole and exclusive property of Samsung  Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  right is granted by one party to the other party under this document, by implication, estoppel or otherwise.  Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  similar applications where product failure could result in loss of life or personal or physical harm, or any  military or defense application, or any governmental procurement to which special terms or provisions  may apply.  For updates or additional information about Samsung products, contact your nearest Samsung office.  All brand names, trademarks and registered trademarks belong to their respective owners.

    Hot Tags : DDR FLASH K4B2G1646F-BYMA SAMSUNG

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