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First-Rank T25S40 SOP8 4M BIT SPI NOR FLASH

The T25S40A is 4M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD). The Dual I/O data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is transferred with speed of 432Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt.

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First-Rank T25S80A SOP8 8M BIT SPI NOR FLASH

The T25S80A is 8M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD). The Dual I/O data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is transferred with speed of 432Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt.

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FIRST-RANK T25S16 16M BIT SPI NOR FLASH

The T25S16A is 16M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD). The Dual I/O data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is transferred with speed of 432Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt.

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SAMSUNG KLM4G1FETE-B041 FBGA EMMC

SAMSUNG eMMC is an embedded MMC solution designed in a BGA package form. eMMC operation is identical to a MMC device and therefore is a simple read and write to memory using MMC protocol v5.1 which is a industry standard.

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Nuvoton NPCA110PA0YX QFN40 Audio power amplifier

The Nuvoton NPCA110P device is a member of Nuvoton’s Sound Enhancing family optimized for portable devices such as docking stations for MP3-players and mobile phones, MultiMedia speakers, PC monitor speakers and Boom boxes.

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SAMSUNG K4A8G165WB-BCRC FBGA-96 8Gb DDR4 SDRAM

The 8Gb DDR4 SDRAM B-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications.

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SAMSUNG K4A4G165WE-BCRC FBGA-96 4Gb DDR4 SDRAM

The 4Gb DDR4 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2400Mb/sec/pin (DDR4-2400) for general applications.

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Nanya NT5CC256M16EP-EK DDR3 4Gb SDRAM

The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM.

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Nanya NT5CC128M16JR-EK TFBGA-96 DDR3(L) 2Gb SDRAM

The DDR3(L) SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM.

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Nanya NT5CB128M16JR-FL TFBGA-96 DDR SDRAM

The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

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GMT G5108P8U MSOP-8 Low-Noise Step-up DC-DC Converter

The G5108 boost converter in corporate high-performance, current-mode, frequency selectable pulse width modulation (PWM) circuitry with a built-in 0.2Ω n-channel MOSFET to provide a highly efficient regulator.

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UMW AO3401A P-Channel Enhancement MOSFET

Drain-source voltage (Vdss): 30V; continuous drain current (Id) (at 25°C): 4.1A; gate-source threshold voltage: 1.3V @ 250uA; drain-source on-resistance: 65mΩ @ 4.2A ,10V; Maximum power consumption (Ta = 25°C): 350mW; Type: P-channel.

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What are you looking for?

First-Rank T25S40 SOP8 4M BIT SPI NOR FLASH

First-Rank T25S80A SOP8 8M BIT SPI NOR FLASH

FIRST-RANK T25S16 16M BIT SPI NOR FLASH

SAMSUNG KLM4G1FETE-B041 FBGA EMMC

Nuvoton NPCA110PA0YX QFN40 Audio power amplifier

SAMSUNG K4A8G165WB-BCRC FBGA-96 8Gb DDR4 SDRAM

SAMSUNG K4A4G165WE-BCRC FBGA-96 4Gb DDR4 SDRAM

Nanya NT5CC256M16EP-EK DDR3 4Gb SDRAM

Nanya NT5CC128M16JR-EK TFBGA-96 DDR3(L) 2Gb SDRAM

Nanya NT5CB128M16JR-FL TFBGA-96 DDR SDRAM

GMT G5108P8U MSOP-8 Low-Noise Step-up DC-DC Converter

UMW AO3401A P-Channel Enhancement MOSFET

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