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ESMT DRAM FLASH M12L2561616A-6TG2A

4M x 16 Bit x 4 Banks Synchronous DRAM The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Hot Tags : DRAM DRAM FLASH M12L2561616A-6TG2A

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ESMT DDR3 SDRAM M15T2G16128A-DEBG2LS

16M x 16 Bit x 8 Banks DDR3(L) SDRAMThe 2Gb Double-Data-Rate-3(L) (DDR3(L)) DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

Hot Tags : DDR3 SDRAM SDRAM M15T2G16128A-DEBG2LS

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ESMT SPI-NAND Flash Memory F50L2G41XA-104YG2B

3.3V 2 Gbit SPI-NAND Flash MemorySerial peripheral interface (SPI) NAND is an SLC NAND Flash memory device that provides a cost-effective nonvolatile memory storage solution where pin count must be kept to a minimum. It is also an alternative solution to SPI NOR, offering superior write performance and cost per bit over SPI NOR.

Hot Tags : SPI-NAND Flash ESMT F50L2G41XA-104YG2B Memory

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ESMT SDRAM M13S5121632A-5TG DDR1 32*16

8M x 16 Bit x 4 Banks Double Data Rate SDRAM

Hot Tags : M13S5121632A-5TG GENERAL DESCRIPTION Serial peripheral interface (SPI) NAND is an SLC NAND Flash memory device that provides a cost-effective nonvolatile memory storage solution where pin count must be kept to a m

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ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

4M x 16 Bit x 4 Banks Double Data Rate SDRAM

Hot Tags : ESMT M13S2561616A-5TG Flash memory

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ESMT SDRAM MEMORY M12L128168A-6TG SDRAM8*16 TSOP54

2M x 16 Bit x 4 Banks Synchronous DRAM The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.

Hot Tags : ESMT SDRAM MEMORY

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ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Hot Tags : M12L64164A-5TG

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ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Hot Tags : ESMT M12L64164A-7TG

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ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

4M x 16 Bit x 4 Banks Synchronous DRAMGENERAL DESCRIPTION The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Hot Tags : M12L2561616A-6TG2T

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Boyamicro Flah memory BY25Q128ASSIG SOP8 208mil

128M BIT SPI NOR FLASHThe BY25Q128AS is 128M-bit Serial Peripheral Interface (SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD).

Hot Tags : FLASH MEMORY memory BY25Q128ASSIG Boyamicro SPI Nor FLASH

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Boyamicro flash memory BY25Q64ASSIG SOP-8208mil

64M BIT SPI NOR FLASHDescription The BY25Q64AS is 64M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt. Additionally, the device supports JEDEC standard manufacturer and device ID and three 256-bytes Security Registers. In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil, 8-pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics for ordering information.

Hot Tags : BY25Q64ASSIG

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Boyamicro flash memory BY25Q32BSTIG SOP-8 150mil

32M BIT SPI NOR FLASHDescription The BY25Q32BS is 32M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt. Additionally, the device supports JEDEC standard manufacturer and device ID and three 256-bytes Security Registers. In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil, 8-pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics for ordering information.

Hot Tags : BY25Q32BSTIG Boyamicro

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