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  • Winbond W9751G6KB-25

    W9751G6KB-25 8M 4 BANKS 16BIT DDR2 SDRAM

    The W9751G6KB is a 512M bits DDR2 SDRAM, organized as 8,388,608 words  4 banks  16 bits.This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W9751G6KB is sorted into the following speed grades: -18, -25, 25I, 25A, 25K and -3.The -18 is compliant to the DDR2-1066 (7-7-7) specification. The -25, 25I, 25A and 25K grade parts are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 is compliant to the DDR2-667 (5-5-5) specification.

    Hot Tags : Serial flash memory Winbond Flash Memory Winbond flash memory agent Serial Nor Flash Memory DDR2 SDRAM Serial flash memory chip

  • Winbond W9825G6KH-6

    Winbond W9825G6KH-6 4 M  4 BANKS  16 BITS SDRAM

    W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words  4 banks  16 bits.

    Hot Tags : Winbond W9825G6KH-6 SDRAM FLASH Flash of memory

  • Winbond W9825G6KH-6I

    Winbond W9825G6KH-6I 4 M  4 BANKS  16 BITS SDRAM

    W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as  4M words  4 banks  16 bits. 

    Hot Tags : memory SDRAM Spi serial flash memory Winbond W9825G6KH-6I Winbond agent

  • EMST M12L64164A-7TG2C

    EMST TOSP-54 M12L64164A-7TG2C SDRAM MEMORY

    1M x 16 Bit x 4 Banks   Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.  Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock  cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be  useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : EMST M12L64164A-7TG2C MEMORY SDRAM MEMORY

  • M12L2561616A-6TG2T

    ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

    4M x 16 Bit x 4 Banks  Synchronous DRAMGENERAL DESCRIPTION  The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.  Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.  Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a  variety of high bandwidth, high performance memory system applications.

    Hot Tags : ESMT M12L2561616A-6TG2T

  •  M12L64164A-7TG

    ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION    The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.  Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock  cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be  useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : ESMT M12L64164A-7TG

  •  M12L64164A-5TG

    ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION   The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : M12L64164A-5TG

  • M12L128168A-6TG

    ESMT SDRAM MEMORY M12L128168A-6TG SDRAM8*16 TSOP54

    2M x 16 Bit x 4 Banks  Synchronous DRAM The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.  

    Hot Tags : SDRAM

  • M13S2561616A-5TG

    ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

    4M x 16 Bit x 4 Banks   Double Data Rate SDRAM

    Hot Tags : ESMT M13S2561616A-5TG

  • M15T2G16128A-DEBG2LS

    ESMT DDR3 SDRAM M15T2G16128A-DEBG2LS

    16M x 16 Bit x 8 Banks  DDR3(L) SDRAMDescription  The 2Gb Double-Data-Rate-3(L) (DDR3(L)) DRAM is double data rate architecture to achieve high-speed operation. It is  internally configured as an eight bank DRAMs.  The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed  double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.  The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are  synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK  rising and  CK  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous  fashion.  These devices operate with a single 1.35V -0.067V/+0.1V or 1.5V ± 0.075V power supply and are available in BGA packages.

    Hot Tags : DDR3 SDRAM M15T2G16128A-DEBG2LS

  •  M15T4G16256A-DEBG2L

    ESMT DDR3 SDRAM M15T4G16256A-DEBG2L

    32M x 16 Bit x 8 Banks  DDR3(L) SDRAMDescription  The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is double data rate architecture to achieve high-speed operation. It is internally  configured as an eight-bank DRAM.  The 4Gb chip is organized as 32Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed  double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.  The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are  synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK  rising and  CK  falling). All I/Os are synchronized with a differential DQS pair in a source synchronous fashion.  These devices operate with a single 1.35V -0.067V/+0.1V or 1.5V ± 0.075V power supply and are available in BGA packages.

    Hot Tags : M15T4G16256A-DEBG2L

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