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/SAMSUNG K4A4G165WE-BCRC FBGA-96 4Gb DDR4 SDRAM

SAMSUNG K4A4G165WE-BCRC FBGA-96 4Gb DDR4 SDRAM

The 4Gb DDR4 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks  device. This synchronous device achieves high speed double-data-rate  transfer rates of up to 2400Mb/sec/pin (DDR4-2400) for general applications.

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    SAMSUNG
  • Product Details

The 4Gb DDR4 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks  device. This synchronous device achieves high speed double-data-rate  transfer rates of up to 2400Mb/sec/pin (DDR4-2400) for general applications.   

The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration,  On Die Termination using ODT pin and Asynchronous Reset .   

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a  pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address  information in a RAS/CAS multiplexing style. The DDR4 device operates  with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) VDDQ  and 2.5V (2.375V~2.75V) VPP.  

The 4Gb DDR4 E-die device is available in 96ball FBGAs(x16).


Key Features

• JEDEC standard 1.2V (1.14V~1.26V)  

• VDDQ = 1.2V (1.14V~1.26V)  

• VPP = 2.5V (2.375V~2.75V)  

• 800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin,  1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for2400Mb/sec/pin 

 • 8 Banks (2 Bank Groups)  

• Programmable CAS Latency(posted CAS):  10,11,12,13,14,15,16,17,18  

• Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600) ,  10,12 (DDR4-1866) ,11,14 (DDR4-2133) and 12,16 (DDR4-2400)  

• 8-bit pre-fetch  

• Burst Length: 8 , 4 with tCCD = 4 which does not allow seamless read  or write [either On the fly using A12 or MRS]  

• Bi-directional Differential Data-Strobe  

• Internal(self) calibration : Internal self calibration through ZQ pin  (RZQ : 240 ohm ± 1%)  

• On Die Termination using ODT pin  

• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at  85C < TCASE < 95 C  

• Asynchronous Reset  

• Package : 96 balls FBGA - x16 

 • All of Lead-Free products are compliant for RoHS 

 • All of products are Halogen-free  

• CRC(Cyclic Redundancy Check) for Read/Write data security  

• Command address parity check 

 • DBI(Data Bus Inversion)  

• Gear down mode  

• POD (Pseudo Open Drain) interface for data input/output  

• Internal VREF for data inputs  

• External VPP for DRAM Activating Power  

• PPR is supported

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