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  •  M13S5121632A-5TG

    ESMT SDRAM M13S5121632A-5TG DDR1 32*16

    8M x 16 Bit x 4 Banks   Double Data Rate SDRAM

    Hot Tags : SDRAM M13S5121632A-5TG ESMT

  • M13S2561616A-5TG

    ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

    4M x 16 Bit x 4 Banks   Double Data Rate SDRAM

    Hot Tags : M13S2561616A-5TG

  • M12L128168A-6TG

    ESMT SDRAM MEMORY M12L128168A-6TG SDRAM8*16 TSOP54

    2M x 16 Bit x 4 Banks  Synchronous DRAMGENERAL DESCRIPTION   The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.  Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.  Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a  variety of high bandwidth, high performance memory system applications.

    Hot Tags : SDRAM MEMORY

  •  M12L64164A-5TG

    ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION   The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : M12L64164A-5TG

  •  M12L64164A-7TG

    ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION    The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.  Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock  cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be  useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : M12L64164A-7TG

  • M12L2561616A-6TG2T

    ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

    4M x 16 Bit x 4 Banks  Synchronous DRAMGENERAL DESCRIPTION  The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.  Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.  Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a  variety of high bandwidth, high performance memory system applications.

    Hot Tags : M12L2561616A-6TG2T

  • BY25Q128ASSIG

    Boyamicro Flah memory BY25Q128ASSIG SOP8 208mil

    128M BIT SPI NOR FLASHDescription  The BY25Q128AS is 128M-bit Serial Peripheral Interface (SPI) Flash memory, and supports the  Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3  (/HOLD). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output  data is transferred with speed of 480Mbits/s. The device uses a single low voltage power supply,  ranging from 2.7 Volt to 3.6 Volt.  Additionally, the device supports JEDEC standard manufacturer and device ID and three 256-bytes  Security Registers.  In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil, 8-  pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics for  ordering information.

    Hot Tags : flash memory memory BY25Q128ASSIG Boyamicro

  • BY25Q64ASSIG

    Boyamicro flash memory BY25Q64ASSIG SOP-8208mil

    64M BIT SPI NOR FLASHDescription  The BY25Q64AS is 64M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the  Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3  (/HOLD). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad  output data is transferred with speed of 480Mbits/s. The device uses a single low voltage power  supply, ranging from 2.7 Volt to 3.6 Volt.  Additionally, the device supports JEDEC standard manufacturer and device ID and three  256-bytes Security Registers.  In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil,  8-pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics  for ordering information.

    Hot Tags : BY25Q64ASSIG

  • BY25Q32BSTIG

    Boyamicro flash memory BY25Q32BSTIG SOP-8 150mil

    32M BIT SPI NOR FLASHDescription  The BY25Q32BS is 32M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the  Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3  (/HOLD). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad  output data is transferred with speed of 480Mbits/s. The device uses a single low voltage power  supply, ranging from 2.7 Volt to 3.6 Volt.  Additionally, the device supports JEDEC standard manufacturer and device ID and three  256-bytes Security Registers.  In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil,  8-pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics  for ordering information.

    Hot Tags : BY25Q32BSTIG

  • K4B4G1646E-BYMA

    SAMSUNG DDR FLASH K4B4G1646E-BYMA FBGA-96

    4Gb E-die DDR3L SDRAM Only x16SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND  SPECIFICATIONS WITHOUT NOTICE.  Products and specifications discussed herein are for reference purposes only. All information discussed  herein is provided on an "AS IS" basis, without warranties of any kind.  This document and all information discussed herein remain the sole and exclusive property of Samsung  Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  right is granted by one party to the other party under this document, by implication, estoppel or otherwise.  Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  similar applications where product failure could result in loss of life or personal or physical harm, or any  military or defense application, or any governmental procurement to which special terms or provisions  may apply.  For updates or additional information about Samsung products, contact your nearest Samsung office.  All brand names, trademarks and registered trademarks belong to their respective owners.

    Hot Tags : DDR FLASH K4B4G1646E-BYMA SAMSUNG

  • K4B2G1646F-BYMA

    SAMSUNG DDR FLASH K4B2G1646F-BYMA 2GB

    2Gb F-die DDR3L SDRAM x1696FBGA with Lead-Free & Halogen-Free  (RoHS compliant)Products and specifications discussed herein are for reference purposes only. All information discussed  herein is provided on an "AS IS" basis, without warranties of any kind.  This document and all information discussed herein remain the sole and exclusive property of Samsung  Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  right is granted by one party to the other party under this document, by implication, estoppel or otherwise.  Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  similar applications where product failure could result in loss of life or personal or physical harm, or any  military or defense application, or any governmental procurement to which special terms or provisions  may apply.  For updates or additional information about Samsung products, contact your nearest Samsung office.  All brand names, trademarks and registered trademarks belong to their respective owners.

    Hot Tags : FLASH K4B2G1646F-BYMA

  • MXIC FLASH MEMORY MX25L12835FM2I-10G SOP8

    MXIC FLASH MEMORY MX25L12835FM2I-10G SOP8

    3V, 128M-BIT [x 1/x 2/x 4]  CMOS MXSMIO®   (SERIAL MULTI I/O)  FLASH MEMORY

    Hot Tags : MXIC MX25L12835FM2I-10G MEMORY FLASH MEMORY

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