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MXIC MX25U1633FZUI 16M-BIT FLASH MEMORY

The MX25U1635E are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4.

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Winbond W9864G6KH-6I 1M  4 BANKS  16 BITS SDRAM

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words  4 banks  16 bits.

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Winbond W9864G6KH-6 TSOP-54 SDRAM

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words  4 banks  16 bits.

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Winbond W971GG6NB-25I 8M  8 BANKS  16 BIT DDR2 SDRAM

The W971GG6NB is a 1G bits DDR2 SDRAM, organized as 8,388,608 words  8 banks  16 bits. This device achieves high speed transfer rates up to 1066 Mbps (DDR2-1066) for various applications. W971GG6NB is sorted into the following grade parts: -18, 18I, 18J, -25, 25I, 25J and -3.

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MXIC MX25L25645GZ2I-10G 3V 256M-BIT FLASH MEMORY

MX25L25645G is 256Mb bits Serial NOR Flash memory, which is configured as 33,554,432 x 8 internally. When it is in two or four I/O mode, the structure becomes 134,217,728 bits x 2 or 67,108,864 bits x 4.

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MXIC MX25L25645GM2I-08G NOR FLASH

MX25L25645G is 256Mb bits Serial NOR Flash memory, which is configured as 33,554,432 x 8 internally. When it is in two or four I/O mode, the structure becomes 134,217,728 bits x 2 or 67,108,864 bits x 4.

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MAPLESEMI SLF7N70C 700V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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W25Q80EWUXIE 1.8V 8M-BIT SERIAL FLASH MEMORY WITH

The W25Q80EW (8M-bit) Serial Flash memory provides a storage solution for systems with limited space,pins and power.

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MAPLESEMI SLF10N70C 700V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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MAPLESEMI SLP7N80C 800V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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MAPLESEMI SLW9N90C 900V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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MAPLESEMI SLW9N90CZ 900V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Products

MXIC MX25U1633FZUI 16M-BIT FLASH MEMORY

Winbond W9864G6KH-6I 1M  4 BANKS  16 BITS SDRAM

Winbond W9864G6KH-6 TSOP-54 SDRAM

Winbond W971GG6NB-25I 8M  8 BANKS  16 BIT DDR2 SDRAM

MXIC MX25L25645GZ2I-10G 3V 256M-BIT FLASH MEMORY

MXIC MX25L25645GM2I-08G NOR FLASH

MAPLESEMI SLF7N70C 700V N-Channel MOSFET

W25Q80EWUXIE 1.8V 8M-BIT SERIAL FLASH MEMORY WITH

MAPLESEMI SLF10N70C 700V N-Channel MOSFET

MAPLESEMI SLP7N80C 800V N-Channel MOSFET

MAPLESEMI SLW9N90C 900V N-Channel MOSFET

MAPLESEMI SLW9N90CZ 900V N-Channel MOSFET

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