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PHISON Embedded UFS

May 20, 2022

PS8317 UFS 2.2 Series specifications and functional features

capacity

64GB

128GB

256GB

joggle

HS-G3x2 UFS 2.2

HS-G3x2 UFS 2.2

HS-G3x2 UFS 2.2

package

153 Ball
(11.5x13x1.0mm)

153 Ball
(11.5x13x1.0mm)

153 Ball
(11.5x13x1.0mm)

Flash Memory

176 Layers

176 Layers

176 Layers

Flash type

TLC

TLC

TLC

potency
Continuous Read / Write (MB/s)

Up to R800/W400

Up to R1000/W800

Up to R1000/W950

Speed up the write-in device dimensions

2GB

4GB

8GB

Host performance booster

HPB2.0

HPB2.0

HPB2.0

Operating temperature: Grade2 / Grade3 / Industrial

±40~105℃/±40~85℃

±40~105℃/±40~85℃

±40~105℃/±40~85℃

Core Voltage, (VCC)

3.3V

3.3V

3.3V

I / O voltage (VCCQ)

1.8V

1.8V

1.8V

reliability
W/E Endurance

TLC:≥ 3K

TLC:≥ 3K

TLC:≥ 3K

Data preservation period

1year @ Life end
10years @ initial

1year @ Life end
10years @ initial

1year @ Life end
10years @ initial


PS8317 UFS 3.1 series specifications and functional features

capacity

64GB

128GB

256GB

joggle

HS-G4x2 UFS 3.1

HS-G4x2 UFS 3.1

HS-G4x2 UFS 3.1

package

153 Ball
(11.5x13x1.0mm)

153 Ball
(11.5x13x1.0mm)

153 Ball
(11.5x13x1.0mm)

Flash Memory

176 Layers

176 Layers

176 Layers

Flash type

TLC

TLC

TLC

potency
Continuous Read / Write (MB/s)

Up to R800/W420

Up to R1500/W800

Up to R1650/W1100

Speed up the write-in device dimensions

2GB

4GB

8GB

Host performance booster

HPB2.0

HPB2.0

HPB2.0

Operating temperature: Grade2 / Grade3 / Industrial

±40~105℃/±40~85℃

±40~105℃/±40~85℃

±40~105℃/±40~85℃

Core Voltage, (VCC)

2.5V

2.5V

2.5V

I / O voltage (VCCQ)

1.2V

1.2V

1.2V

reliability
W/E Endurance

TLC:≥ 3K

TLC:≥ 3K

TLC:≥ 3K

Data preservation period

1year @ Life end
10years @ initial

1year @ Life end
10years @ initial

1year @ Life end
10years @ initial


Embedded quotient gauge UFS 2.2 vs. 3.1 specifications are compared


UFS 2.2

UFS 3.1

master control

PS8317

PS8318

joggle

HS-G3x2 UFS 2.2

HS-G3x2 UFS 3.1

Flash Memory

Micron 176L, 3D TLC, 512Gbit

Micron 176L, 3D TLC, 512Gbit

capacity (GB)

64/128/256GB

128/256/512GB

NAND channel, Maximum transmission rate

2ch, 800MT/s

2ch, up 1600MT/s or 4ch, up to 800MT/s

Continuous read / Write performance (up to)

1040/910 MB/s

1900/1425 MB/s

4K Random Read / Write Performance (up to)

120K/175K IOPS

200K/235K IOPS

Effective Power, (RMS)

TBD

TBD

Write to the acceleration technology

Supported

Supported

HPB 2.0

Supported

Supported

Package type

BGA-153

BGA-153

size (mm)

11.5 x 13.0

11.5 x 13.0

Operating temperature

±25°C to 85°C

±25°C to 85°C

Model number (PartNo.)

PSUF22H17-A064SS
PSUF22H17-A128SS
PSUF22H17-A256SS

PSUF31L18-A128SS
PSUF31L18-A256SS
PSUF31L18-A512SS


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