Phison and AMD are the first to release the world's first PCIe Gen4 x4 NVMe SSD controller chip - PS5016-E16, which supports 96-layer 3D NAND flash memory, supports 8-channel 8 / on-board DRAM, and can achieve the highest parallelism and sequential read up to 5 GB/s fetch performance (write speed depends on actual chip/SSD capacity, in best case it is claimed to be 4.4 GB/s)

PHISON is a cost-effective PS5019-E19T PCIe Gen4x4 controller chip with both high performance and power saving, using 28nm process, the highest continuous read and write performance can reach 3,700/3,000MB/s, random read and write can reach 440K/640K IOPS, and support up to 2TB capacity.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Indasina agent Phison flash master ICPhison Electronics was founded in Hsinchu, Taiwan in November 2000. Starting from providing the world's first single-chip USB flash disk control chip, Phison has now become a leader in the field of control chips such as USB disk, SD memory card, EMMC, UFS, PATA, SATA and PCIe solid-state disk. Phison not only sells more than 600 million control chips worldwide every year, but also has an annual revenue of $1.64 billion.Flash memory is rapidly entering the consumer market, industrial control market and enterprise applications. Phison also continues to innovate new technologies in embedded storage devices (embedded), solid state storage devices (SSD) and confidential products.Phison has successfully entered the global market including China, North America, South America, Europe, Africa, Australia, Russia, Japan, South Korea, India, ASEAN and Taiwan.

PHISON PCIe SSD controller chip PS5012-E12 adopts TSMC's 28nm process, equipped with 3D NAND Flash, the main interface is Gen3x4 NVMe, the transmission speed will be up to 3200MB/s continuous read and 3000MB/s continuous write, 4KB random read (IOPs) The speed can reach 600,000 times, and the maximum capacity can be as high as 8TB; and it supports Thunderbolt 3 portable external solid-state drive. It is suitable for enterprise-level high-end storage such as artificial intelligence (AI), gaming PC/laptop, business mobile SSD, and servers for small and medium-sized enterprises to build virtual hosts.

PHISON PCIe SSD controller chip PS5012-E12 adopts TSMC's 28nm process, equipped with 3D NAND Flash, the main interface is Gen3x4 NVMe, the transmission speed will be up to 3200MB/s continuous read and 3000MB/s continuous write, 4KB random read (IOPs) The speed can reach 600,000 times, and the maximum capacity can be as high as 8TB; and it supports Thunderbolt 3 portable external solid-state drive. It is suitable for enterprise-level high-end storage such as artificial intelligence (AI), gaming PC/laptop, business mobile SSD, and servers for small and medium-sized enterprises to build virtual hosts.

PHISON PCIe SSD controller chip PS5012-E12 adopts TSMC's 28nm process, equipped with 3D NAND Flash, the main interface is Gen3x4 NVMe, the transmission speed will be up to 3200MB/s continuous read and 3000MB/s continuous write, 4KB random read (IOPs) The speed can reach 600,000 times, and the maximum capacity can be as high as 8TB; and it supports Thunderbolt 3 portable external solid-state drive. It is suitable for enterprise-level high-end storage such as artificial intelligence (AI), gaming PC/laptop, business mobile SSD, and servers for small and medium-sized enterprises to build virtual hosts.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

PS5008 series SSD master supports PCIe Gen3.0x2 interface and NVMe protocol, adopts 40nm process, supports 1z nm MLC/TLC NAND and 3D NAND Flash. The sequential read and write speeds can reach 1600MB/s and 1300MB/s, respectively, and the 4k random read and write speeds can reach 240K IOPS and 220K IOPS, respectively.Among them, PS5008-E8 supports DRAM, and PS5008-E8T does not have DRAM.