Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PESD2ETH-D Ultra low capacitance double rail-to-rail ESD protection diode
General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT457 Surface-Mounted Device (SMD) plastic package. The device is designed to protect two high-speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. The device integrates two ultra low capacitance rail-to-rail diodes and one additional ESD protection diode to ensure signal line protection even if no supply voltage is available.
Features and benefits
• ESD protection of two high-speed data lines
• Ultra low capacitance: CD = 1.3 pF
• ISO 10605 (330 pF, 2 kΩ) up to 15 kV
• ESD protection up to 8 kV
• AEC-Q101 qualified
Applications
• 100BASE-T1 / OPEN Allicance BroadR-Reach automotive Ethernet
• Low-Voltage Differential Signaling (LVDS) automotive
• USB 2.0 automotive
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Supports the following:S9KEAZN16AMLC(R),S9KEAZN32AMLC(R),S9KEAZN64AMLC(R),S9KEAZN16AMLH(R),S9KEAZN32AMLH(R), S9KEAZN64AMLH(R)
KEA8 Sub-Family Data SheetSupports the following:S9KEAZN8ACTG(R)S9KEAZN8ACFK(R)S9KEAZN8AMTG(R) S9KEAZN8AMFK(R)
i.MX RT1050 Crossover
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
32-bit ARM Cortex-M0+ microcontroller; up to 32 kB flash and 8 kB SRAM; 12-bit ADC; comparator
Ultra low capacitance quadruple rail-to-rail ESD protection
30 V, 180 mA dual N-channel Trench MOSFET
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IPv6 network supported