Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PESD2ETH-D Ultra low capacitance double rail-to-rail ESD protection diode
General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT457 Surface-Mounted Device (SMD) plastic package. The device is designed to protect two high-speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. The device integrates two ultra low capacitance rail-to-rail diodes and one additional ESD protection diode to ensure signal line protection even if no supply voltage is available.
Features and benefits
• ESD protection of two high-speed data lines
• Ultra low capacitance: CD = 1.3 pF
• ISO 10605 (330 pF, 2 kΩ) up to 15 kV
• ESD protection up to 8 kV
• AEC-Q101 qualified
Applications
• 100BASE-T1 / OPEN Allicance BroadR-Reach automotive Ethernet
• Low-Voltage Differential Signaling (LVDS) automotive
• USB 2.0 automotive
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