Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NEXPERIA PBSS4240X 40 V, 2 A NPN low VCEsat (BISS) transistor
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:PBSS5240X.
Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency due to less heat generation
Applications
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)
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