Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NEXPERIA PBSS4240X 40 V, 2 A NPN low VCEsat (BISS) transistor
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:PBSS5240X.
Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency due to less heat generation
Applications
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Supports the following:S9KEAZN16AMLC(R),S9KEAZN32AMLC(R),S9KEAZN64AMLC(R),S9KEAZN16AMLH(R),S9KEAZN32AMLH(R), S9KEAZN64AMLH(R)
KEA8 Sub-Family Data SheetSupports the following:S9KEAZN8ACTG(R)S9KEAZN8ACFK(R)S9KEAZN8AMTG(R) S9KEAZN8AMFK(R)
i.MX RT1050 Crossover
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
32-bit ARM Cortex-M0+ microcontroller; up to 32 kB flash and 8 kB SRAM; 12-bit ADC; comparator
Ultra low capacitance quadruple rail-to-rail ESD protection
30 V, 180 mA dual N-channel Trench MOSFET
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