Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
What are you looking for?
Products
NEXPERIA PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX.
Features and benefits
Very low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Supports the following:S9KEAZN16AMLC(R),S9KEAZN32AMLC(R),S9KEAZN64AMLC(R),S9KEAZN16AMLH(R),S9KEAZN32AMLH(R), S9KEAZN64AMLH(R)
KEA8 Sub-Family Data SheetSupports the following:S9KEAZN8ACTG(R)S9KEAZN8ACFK(R)S9KEAZN8AMTG(R) S9KEAZN8AMFK(R)
i.MX RT1050 Crossover
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
32-bit ARM Cortex-M0+ microcontroller; up to 32 kB flash and 8 kB SRAM; 12-bit ADC; comparator
Ultra low capacitance quadruple rail-to-rail ESD protection
30 V, 180 mA dual N-channel Trench MOSFET
Indasina, a group corporation composed of factories, is committed to a variety of electronic products and the overall customized solutions.
IPv6 network supported