Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
What are you looking for?
Products
NEXPERIA PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Supports the following:S9KEAZN16AMLC(R),S9KEAZN32AMLC(R),S9KEAZN64AMLC(R),S9KEAZN16AMLH(R),S9KEAZN32AMLH(R), S9KEAZN64AMLH(R)
KEA8 Sub-Family Data SheetSupports the following:S9KEAZN8ACTG(R)S9KEAZN8ACFK(R)S9KEAZN8AMTG(R) S9KEAZN8AMFK(R)
i.MX RT1050 Crossover
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
32-bit ARM Cortex-M0+ microcontroller; up to 32 kB flash and 8 kB SRAM; 12-bit ADC; comparator
Ultra low capacitance quadruple rail-to-rail ESD protection
30 V, 180 mA dual N-channel Trench MOSFET
Indasina, a group corporation composed of factories, is committed to a variety of electronic products and the overall customized solutions.
IPv6 network supported