Spot Product NXP SOT363 BSS138BKS
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
IP4285CZ6-TD ESD protection for high-speed interfaces
1. General description
The device is designed to protect high-speed interfaces such as USB 2.0 ports against
ElectroStatic Discharge (ESD).
The device includes four high-level ESD protection diode structures for high-speed signal lines. It is encapsulated in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
All signal lines are protected by a special diode configuration offering ultra low line capacitance of 0.85 pF maximum. This configuration provides protection to downstream components from ESD voltages up to ±12 kV contact according to IEC 61000-4-2, level 4.
2. Features and benefits
• System ESD protection for USB 2.0
• All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±12 kV according to IEC 61000-4-2, level 4
• Line capacitance of 0.85 pF maximum for each channel
3. Applications
The device is designed for receiver and transmitter port protection in:
• Portable devices
• TVs, monitors
• DVD recorders and players
• Notebooks, mother boards, graphic cards and ports
• Set-top boxes and game consoles
Indasina, a group corporation composed of factories, is committed to a variety of electronic products and the overall customized solutions.