product
Products
Home /

SEMICONDUCTORS

/

Nanya

/Nanya NT5CC128M16JR-EK TFBGA-96 DDR3(L) 2Gb SDRAM

Nanya NT5CC128M16JR-EK TFBGA-96 DDR3(L) 2Gb SDRAM

The DDR3(L) SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. 

  • Brand:

    NANYA
  • Product Details

Basic Functionality


The DDR3(L) SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM.  The DDR3(L) SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n prefetch architecture is  combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write  operation for the DDR3(L) SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and  eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.


Read and write operation to the DDR3(L) SDRAM are burst oriented, start at a selected location, and continue for a burst  length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active  command, which is then by a Read or Write command. The address bits registered coincident with the Active  command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A14 select the row). The  address bit registered coincident with the Read or Write command are used to select the starting column location for the  burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the  fly’ (via A12) if enabled in the mode register.


Prior to normal operation, the DDR3(L) SDRAM must be powered up and initialized in a predefined manner. The following  sections provide detailed information covering device reset and initialization, register definition, command descriptions  and device operation.


Features

 Basis DDR3 Compliant  

- 8n Prefetch Architecture  

- Differential Clock(CK/) and Data Strobe(DQS/)  

- Double-data rate on DQs, DQS and DM  

 Data Integrity  

- Auto Self Refresh (ASR) by DRAM built-in TS  

- Auto Refresh and Self Refresh Modes  

 Power Saving Mode  

- Power Down Mode

 Signal Integrity  

- Configurable DS for system compatibility  

- Configurable On-Die Termination  

- ZQ Calibration for DS/ODT impedance accuracy via  external ZQ pad (240 ohm ± 1%)  

 Signal Synchronization  

- Write Leveling via MR settings 5  

- Read Leveling via MPR  

 Interface and Power Supply  

- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)  

- SSTL_1353  for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)

Send A Message
If you are interested in our products and want to know more details,please leave a message here,we will reply you as soon as we can.
If you have questions or suggestions,please leave us a message,we will reply you as soon as we can!

Product Categories

New Products

Related Products
Nanya NT5CC256M16EP-EK

Nanya NT5CC256M16EP-EK DDR3 4Gb SDRAM

The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits.  It is internally configured as an octal-bank DRAM.  

OEM customized DVB S2 satellite TV receiver

Factory OEM customized DVB S2 satellite TV receiver full hd set top box upgrade software wifi free to air wifi wireless adapte

Place of Origin: ChinaBrand Name: INDASINAModel Number: Ali M3510CFTA(Free To Air): YesType: Digital, DVB-S2/HD/MPEG-4/H.264High Definition: YesChipset: Ali M3510CVideo Resolution: 1080P/1080i/720p/576P/576i/480p/480iInput Voltage: AC 80-260V 50~60HzUSB: Two USBFunction: 3G, Wifi, IPTV, YouTube, Weather, Google MapFeature: IKS, SKS, CCCAM, New cam, Mscam,BISS, POWERVU, Dolby

Winbond W9825G6KH-6I

Winbond W9825G6KH-6I 4 M  4 BANKS  16 BITS SDRAM

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as  4M words  4 banks  16 bits. 

23.6 inch LED TV backlight CKD SKD kits

Wholesale OEM ODM 23.6inch LED TV CKD SKD Kits LED backlight solutions

*23.6inch/24inch LED TV Backlight CKD solutions *Model No.: 236A01 *Brightness: 4120cd/m² *LED Bar (2*6) *Diffuser Plate*1 *Diffuser Film*1 *Reflector Film*1

 M12L64164A-5TG

ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION   The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

 M12L64164A-5TG2Y

ESMT DRAM MEMORY M12L64164A-5TG2Y

1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION   The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

NUVOTON  NUC029LAN

NUVOTON NUC029LAN M0 series MCU IC LQFP48

Operating range 2.5V ~ 5.5V, operating temperature-40 ℃ ~ +85 ℃Application: LED lighting control, industrial control, motor control, etc.

T21 Extreme 2 megapixel encoding processor

Ingenic T21 Extreme 2 megapixel encoding processor

*Professional level imaging ISP, night vision enhancement *Smart H.264 coding engine, ultra low code flow control *Extreme BOM cost control *Leading low power technology *Built-in Ethernet PHY

Please tell us your needs

Indasina, a group corporation composed of factories, is committed to a variety of electronic products and the overall customized solutions.

partners 8
Partners7
Partners6
Partners5
Partners4
Partners3
Partners2
Partners1
Leave a message Request A Free Quote
If you are interested in our products and want to know more details,please leave a message here,we will reply you as soon as we can.