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  • EMST M12L64164A-7TG2C

    EMST TOSP-54 M12L64164A-7TG2C SDRAM MEMORY

    1M x 16 Bit x 4 Banks   Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.  Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock  cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be  useful for a variety of high bandwidth, high performance memory system applications.

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  • M12L64164A-7TG

    ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION    The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.  Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock  cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be  useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : ESMT M12L64164A-7TG

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  • M12L64164A-5TG

    ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION   The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : ESMT M12L64164A-5TG

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  • M12L64164A-5TG2Y

    ESMT DRAM MEMORY M12L64164A-5TG2Y

    1M x 16 Bit x 4 Banks   Synchronous DRAMGENERAL DESCRIPTION   The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

    Hot Tags : DRAM MEMORY

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