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Winbond W25Q16JVSNIQ 3V 16Mbit Serial Flash Memeory With

The W25Q16JV (16M-bit) Serial Flash memory provides a storage solution for systems with limited space,pins and power.

Hot Tags : Winbond W25Q16JVSNIQ Serial flash memory Winbond Flash Memory Winbond flash memory agent Micron serial nor flash memory Serial Nor Flash Memory

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EMST TOSP-54 M12L64164A-7TG2C SDRAM MEMORY

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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MXIC FLASH MEMORY MX25L1606EM2I-12G SOIC-8_208mil

3V, 16M-BIT [x 1/x 2] CMOS SERIAL FLASH MEMORYKey Features • Hold Feature • Low Power Consumption • Auto Erase and Auto Program Algorithms • Additional 512 bit secured OTP for unique identifier

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GD FLASH MEMORY GD25Q16CSIG SOP-8_208mil

GENERAL DESCRIPTION The GD25Q16C(16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.

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SAMSUNG DDR FLASH K4B2G1646F-BYMA 2GB

2Gb F-die DDR3L SDRAM x1696FBGA with Lead-Free & Halogen-Free (RoHS compliant)

Hot Tags : FLASH DDR FLASH SAMSUNG K4B2G1646F-BYMA

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SAMSUNG DDR FLASH K4B4G1646E-BYMA FBGA-96

4Gb E-die DDR3L SDRAM Only x16SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Hot Tags : SAMSUNG K4B4G1646E-BYMA

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ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

4M x 16 Bit x 4 Banks Synchronous DRAMGENERAL DESCRIPTION The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Hot Tags : ESMT M12L64164A-7TG

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ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Hot Tags : M12L64164A-5TG Flash memory

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ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

4M x 16 Bit x 4 Banks Double Data Rate SDRAM

Hot Tags : SDRAM ESMT M13S2561616A-5TG

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ESMT SDRAM M13S5121632A-5TG DDR1 32*16

8M x 16 Bit x 4 Banks Double Data Rate SDRAM

Hot Tags : M13S5121632A-5TG GENERAL DESCRIPTION Serial peripheral interface (SPI) NAND is an SLC NAND Flash memory device that provides a cost-effective nonvolatile memory storage solution where pin count must be kept to a m

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ESMT DDR3 SDRAM M15T2G16128A-DEBG2LS

16M x 16 Bit x 8 Banks DDR3(L) SDRAMThe 2Gb Double-Data-Rate-3(L) (DDR3(L)) DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

Hot Tags : DDR3 SDRAM M15T2G16128A-DEBG2LS

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Winbond W25Q16JVSNIQ 3V 16Mbit Serial Flash Memeory With

EMST TOSP-54 M12L64164A-7TG2C SDRAM MEMORY

MXIC FLASH MEMORY MX25L1606EM2I-12G SOIC-8_208mil

GD FLASH MEMORY GD25Q16CSIG SOP-8_208mil

SAMSUNG DDR FLASH K4B2G1646F-BYMA 2GB

SAMSUNG DDR FLASH K4B4G1646E-BYMA FBGA-96

ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

ESMT SDRAM M13S5121632A-5TG DDR1 32*16

ESMT DDR3 SDRAM M15T2G16128A-DEBG2LS

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