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/ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

4M x 16 Bit x 4 Banks  Synchronous DRAM

GENERAL DESCRIPTION  

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.  Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.  Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a  variety of high bandwidth, high performance memory system applications.

  • Brand:

    ESMT
  • Product Details

FEATURES  


 EDEC standard 3.3V power supply  

 

     LVTTL compatible with multiplexed address  

 

  Four banks operation  

 

  MRS cycle with address key programs 

 

- CAS Latency ( 2 & 3 )

 

- Burst Length ( 1, 2, 4, 8 & full page ) 

 

- Burst Type ( Sequential & Interleave )  

 

  All inputs are sampled at the positive going edge of  the system clock 

 

  Burst Read single write operation  

 

  DQM for masking  

 

  Auto & self refresh  

 

  64ms refresh period (8K cycle)  

 

  All Pb-free products are RoHS-Compliant


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