Esmt F50l1g41lb 104yg2m

ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

4M x 16 Bit x 4 Banks Synchronous DRAMGENERAL DESCRIPTION The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

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ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

1M x 16 Bit x 4 Banks Synchronous DRAMThe M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

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ESMT SDRAM MEMORY M12L128168A-6TG SDRAM8*16 TSOP54

2M x 16 Bit x 4 Banks Synchronous DRAM The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.

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ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

4M x 16 Bit x 4 Banks Double Data Rate SDRAM

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ESMT SPI-NAND Flash Memory F50L2G41XA-104YG2B

3.3V 2 Gbit SPI-NAND Flash MemorySerial peripheral interface (SPI) NAND is an SLC NAND Flash memory device that provides a cost-effective nonvolatile memory storage solution where pin count must be kept to a minimum. It is also an alternative solution to SPI NOR, offering superior write performance and cost per bit over SPI NOR.

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ESMT DDR3 SDRAM M15T4G16256A-DEBG2L

32M x 16 Bit x 8 Banks DDR3(L) SDRAM The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM.

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ESMT DRAM MEMORY M12L64164A-5TG2Y

1M x 16 Bit x 4 Banks Synchronous DRAMGENERAL DESCRIPTION The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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ESMT M15T1G1664A-DEBG2C TOSP-54 1M x 16 Bit x 4 Banks Synchronous DRAM

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

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ESMT M14D5121632A-2.5BG2A 8M x 16 Bit x 4 Banks DDR2 SDRAM

8M x 16 Bit x 4 Banks DDR II SDRAM

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ESMT M12L16161A-7TG2Q TSOP50 512K x 16Bit x 2Banks SDRAM

The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.

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ESMT F50L1G41LB-104YG2M 3.3V 1Gbit SPI-NAND Flash Memory

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum.

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ESMT SDRAM MEMORY M12L2561616A-6TG2T TOSP-54

ESMT M12L64164A-7TG TOSP-54 SDRAM MEMORY

ESMT SDRAM MEMORY M12L64164A-5TG TSOP54

ESMT SDRAM MEMORY M12L128168A-6TG SDRAM8*16 TSOP54

ESMT M13S2561616A-5TG DDR1 SDRAM 16*16

ESMT SPI-NAND Flash Memory F50L2G41XA-104YG2B

ESMT DDR3 SDRAM M15T4G16256A-DEBG2L

ESMT DRAM MEMORY M12L64164A-5TG2Y

ESMT M15T1G1664A-DEBG2C TOSP-54 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT M14D5121632A-2.5BG2A 8M x 16 Bit x 4 Banks DDR2 SDRAM

ESMT M12L16161A-7TG2Q TSOP50 512K x 16Bit x 2Banks SDRAM

ESMT F50L1G41LB-104YG2M 3.3V 1Gbit SPI-NAND Flash Memory

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