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ESMT DRAM MEMORY M12L64164A-5TG2Y

1M x 16 Bit x 4 Banks   Synchronous DRAM

GENERAL DESCRIPTION   

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.

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    ESMT
  • Product Details

GENERAL DESCRIPTION   

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  device to be useful for a variety of high bandwidth, high performance memory system applications.



FEATURES  

JEDEC standard 3.3V power supply  

LVTTL compatible with multiplexed address  

Four banks operation  

MRS cycle with address key programs  

- CAS Latency (2 & 3)  

- Burst Length (1, 2, 4, 8 & full page)  

- Burst Type (Sequential & Interleave)  

All inputs are sampled at the positive going edge of the  system clock  

DQM for masking  

Auto & self refresh  

64ms refresh period (4K cycle)   

- 15.6 μ s refresh interval

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