Part No.GC8024 Support platform: the platform is required to come with ISP, MTK, all except 72, qualcomm, spreadtrum 9832 system Features: high cost performance RAW 8M product, support 6.5*6.5 FF structure Application: mobile phone /MID

4M x 16 Bit x 4 Banks   Double Data Rate SDRAM

8M x 16 Bit x 4 Banks   Double Data Rate SDRAM

The G2138 is a high-performance step-up charge  pump and inverter to generate two output voltages, it  is including pumping controllers for positive and negative output voltage.

General Description  The SY8113B is a high efficiency 500 kHz  synchronous step-down DC-DC converter capable of  delivering 3A current. The SY8113B operates over a  wide input voltage range from 4.5V to 18V and  integrates main switch and synchronous switch with  very low RDS(ON) to minimize the conduction loss.  Low output voltage ripple and small external inductor  and capacitor sizes are achieved with 500 kHz  switching frequency. It adopts the instant PWM  architecture to achieve fast transient responses for high  step down applications.Features  • low RDS(ON) for internal switches (top/bottom):  80mΩ/40mΩ  • 4.5-18V input voltage range  • 3A output current capability  • 500 kHz switching frequency  • Instant PWM architecture to achieve fast transient  responses.  • Cycle-by-cycle peak current limitation  • Internal softstart limits the inrush current  • ±1.5% 0.6V reference  • TSOT23-6 package

The AL8843 is a hysteresis mode DC-DC step-down converter,  designed for driving single or multiple series connected LEDs  efficiently from a voltage source higher than the LED voltage.

GENERAL DESCRIPTIONThe ISD2100is a digitalChipCorder®providing single-chip storage and playback of high quality audio. The device features digital de-compression, comprehensive memorymanagement, flash storage,and integrated audio signal path and Class D speaker drivercapable of delivering power of 400mW. This familyutilizes  flash  memory  to  provide  non-volatile  audio  playback  with  duration  up  to 30  seconds (based on 8kHz/4bitADPCMcompression)for a single-chip audio playback solution. The  ISD2100  can  be  controlled  and  programmed  through  an  SPI  serial  interface  or  operated  stand-aloneby triggers applied to the device’s  six GPIO pins.The  ISD2100  requires  no  external  clock  sources  or  components  except  a  speaker  to  deliver  quality audio prompts or sound effects to enhance user interfaces.In  addition  the  part  can  provide  non-volatile  flash  storage  in  1Kbyte  sectors  eliminating  the  need  for additional serial EEPROM/Flash devices.Compared to previousChipCorder series, this device provideshigher sampling frequencies, improved SNR, lower power, fast programming  time and integrated program verification.FEATURESDuration oISD2130–30 seconds based on 8kHz/4bit ADPCM in 1Mbit of flash storageoISD2115A–15seconds based on8kHz/4bit ADPCM in 1Mbit of flash storageAudio Management  oStore pre-recorded audio (Voice Prompts) using high quality digital compressionoUsesimple index based command for playback–no address needed.oExecute pre-programmed macro scripts (Voice Macros) designed to control the configuration of the device and playback Voice Prompts sequences.ControloSerial SPI interface for microprocessor control and programming.oStand-alone control where customized Voice Macro scripts are assigned to GPIO trigger pins.Sample Rateo7sampling frequencies 4, 5.3, 6.4, 8, 12.8, 16 and32kHzare available.oEach Voice Prompt can have optimal sample rate.Compression Algorithmsoμ-Law: 6, 7 or 8 bits per sampleoDifferential μ-Law: 6, 7 or 8 bits per sampleoPCM: 8, 10 or 12 bits per sampleoEnhanced ADPCM: 2, 3, 4 or 5 bits per sampleoVariable-bit-rate optimized compression.This allows best possible compression given a metric of SNR and background noise levels.Oscillator oInternal oscillator with internal reference: factory trimmed to ±1% deviationat room temperature. OutputoPWM: Class D speaker driver to direct drive an 8Ω speaker or buzzer.oDelivers 400mW at 3V supply.I/OsoSPI interface: MISO, MOSI, SCLK, SSB for commands and digital audio datao6 general purpose I/O pins multiplexed withSPI interface.Flash Storageo1Mbit (ISD2130) or 512Kbit (ISD2115A) of storage for combined audio/data.oFast programming time (20...

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.

Phison PS5013-E13T is a four-channel NVMe master with DRAMLess design without external DRAM cache. It can support up to 800MT/s high-speed flash memory interface and achieve sequential read speeds of over 2500MB/s. The flash memory particle TA7BG65AWV follows the definition of Phison and adopts Toshiba Memory's most advanced 96-layer TLC BiCS FLASH. The sequential read and write speeds reach 3,400MB/s and 3,200MB/s, respectively, and the random read and write performance is as high as 685K IOPS and 625K IOPS. Adopt PCIe 3.0 Gen3x4 interface.