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PHISON FLASH
PHISON, the agent of indasina, specializes in flash memory technology, with more than 20 years of experience in flash memory master IC design, more than 2,000 flash memory related patents around the world, including related flash memory management technologies, rich and extensive industry application expertise, including embedded , Enterprise, Endpoint PC, and Mobile Device Applications PATA, SATA, PCIe NVMe, USB, SD, eMMC, UFS.The PHISON PCIe embedded solution master specificationmodelPS5012-E12DIPS5018-E18DIPS5013-E13TIPS5021-E21TIjoggleGen 3x4 NVMeGen 4x4 NVMeGen 3x4 NVMeGen 4x4 NVMemanufacture procedure28nm12nm28nm12 nmMass production timeMPMP: Q2’22MPMP: Q2’22DRAMDDR4DDR4N/AN/Achannel8844Efficiency 13400/3100 MB/s650K/650K IOPS7200/6500 MB/s750K/1000K IOPS2500/1900 MB/s270K/420K IOPS3600/3000 MB/s600K/310K IOPSECC machine-processedLDPC Gen 3 + RAIDLDPC Gen 4 + RAIDLDPC Gen 4 + RAIDLDPC Gen 4 + RAIDCE count64CE (Up to 16TB)32CE (Up to 4TB)16CE (Up to 2TB)16CE (Up to 2TB)Flash Memory64L/96L/112L 3D TLC112L 3D TLC64L/96L/112L 3D TLC112L/176L 3D TLCSecurity encryptionTCG OPALTCG OPALTCG OPALTCG OPALWide temperatureSupportSupportSupportSupportProduct typeU.2/ M.2 2280/M.2 22110M.2 2280M.2 2280/2242/CFX/BGA SSDM.2 2280/ 2230/ BGA SSDThe PHISON SATA embedded solution master specificationmodelPS3111-S11TPS3112-S12DIPS3117-S17TIjoggleSATA IIISATA IIISATA IIImanufacture procedure40nm28nm28nmMass production timeMPMPMPDRAMN/ADDR4/DDR3LN/Achannel282Efficiency 1550/500 MB/s90K/85K IOPS550/530 MB/s98K/90K IOPS550/510 MB/s95K/86K IOPSECC machine-processedLDPC + RAIDLDPC + RAIDLDPC + RAIDCE count16 (Up to 1TB)32 (Up to 16TB)16 (Up to 2TB)Flash Memory64L/96L/112L 3D TLC2D MLC/ SLC64L/96L/112L 3D TLC112L 3D TLCSecurity encryptionN/ATCG OPALTCG OPALWide temperatureSupportSupportSupportProduct type2.5”/M.2 2280/M.2 2242/mSATA/BGA SSD2.5”/M.2 2280/M.2 22422.5”/M.2 2280/M.2 2242/mSATA/CFast PHISON PCIe SSD Embedded Product Positioningnormalized formHigh-end typemaster controlPS5013-E13TIPS5021-E21TIPS5012-E12DIPS5018-E18DIjogglePCIe Gen3 x 4PCIe Gen4 x 4PCIe Gen3 x 4PCIe Gen4 x 4capacity128GB – 2048GB256-2048GB240GB – 15360GB480-3840GBMemory / No-memory DRAMDRAM-lessDRAM-lessDDR4DDR4Continuous read / write effectivenessBurst Seq.2500/1900 MB/sBurst Seq.3600/3000 MB/sBurst Seq.3200/3000 MB/s1Sustained Seq.3200/1000 MB/sBurst Seq.7200/6500 MB/s1Seq.w/o SLC cache : 6800/2400 MB/s4K Random read / write performanceBurst Ran.270K/420K IOPSBurst Ran.600K/310K IOPSBurst Ran.700K/600K IOPS1Sustained Ran.460K/30K IOPSBurst Ran.750K/1000K IOPS1Ran.w/o SLC cache 600K/300K IOPSAverage power consumptionRead: 4.0WWrite: 3.5WRead: 4.6WWrite: 4.6WRead: 9.0WWrite: 6.6WRead: 11.0WWrite: 11.0WReliability (MTBF)> 2,000,000> 1,500,000> 1,500,000> 1,500,000Reliability (TBW)> 2,400 (base on 2048GB)> 1,600 (base on 2048GB)> 12,000 (base on 7680GB)> 5,000 (base on 3840GB)Security encryptionTCG OPALTCG OPALTCG OPALTCG OPALHW PLP CircuitNANASupportNA...
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Small, flexible design for a variety of applicationsPHISON's μSSD (BGA SSD) design is based on JEDEC standards and the latest SATA & PCIe interfaces to simplify customer PCB design and improve board-level reliability.SATA up to 512GB capacity and PCIe up to 1TB capacity, not only support a full range of temperature, but also meet the IATF 16949 standard and can freely choose JEDEC/JESD-22 specifications.PHISON's μSSD (BGA SSD) is equipped with smart firmware functions and provides customized firmware services to achieve reliable and differentiated solutions.modelS11TE13TIE21TIjoggleSATA IIIPCIe Gen 3 x 2PCIe Gen 4 x 4manufacture procedure40nm28nm12nmECC machine-processedLDPCLDPCLDPCSecurity encryption protectionN/ATCG OPALTCG OPALFlash memory support3D TLC3D TLC3D TLCpackage156-Balls(16.0 x 20.0 mm)345-Balls - Type 1113(11.5 x 13.0 mm)291-Balls Type 1620 / 345-Balls Type 1113(16.0 x 20.0 mm) / (11.5 x 13.0 mm)capacity8GB~512GB128GB~512G256GB~1TBpotencyUp to 550/480 MB/sUp to 1700/1400 MB/sUp to 3600/3000 MB/s (Est.)Hot transmission inductionNoYesYespower dissipation1.5W1.8W3.5W (Est.)P/E Cycle3,00030,000 (pSLC)3,00050,000 (pSLC)3,000SRAM protect1-bit Detection2-bit Detection1-bit Correction2-bit Detection1-bit CorrectionIntelligent temperature control and FM systemN/ASupportSupportOperating temperature0 ~ 70°C -40 ~ 85°C0 ~ 70°C -40 ~ 85°C0 ~ 70°C -40 ~ 85°C
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Small and stable and can be applied to the design of various embedded systemsPHISON's eMMC is based on JEDEC standard eMMC 4.5/5.0/5.1 and has 100/153 balls, which can be securely mounted on the board to prevent vibration.Page-based firmware architecture speeds up system runtime and improves durability.It has a capacity of up to 128GB and supports (-40~105°C) AEC Grade2, (-40~85°C) AEC Grade3 and the temperature range of industrial-grade verification specifications, suitable for use in various embedded application systems.Support printing customized eMMC logo.PS8225 Series specifications and functional featurescapacity4GB8GBjoggleeMMC 5.0 HS400eMMC 5.0 HS400package153 Ball(11.5x13x1.0mm)100Ball(14x18x1.4mm)153 Ball(11.5x13x1.0mm)100Ball(14x18x1.4mm)Flash Memory2D2DFlash typepSLCMLCpotencyContinuous Read / Write (MB/s)Up to 250/80Up to 250/60Operating temperature is Grade2 / Grade3 / Industrial±40~105℃/±40~85℃±40~105℃/±40~85℃Core Voltage, (VCC)3.3V3.3VI / O voltage (VCCQ)1.8V or 3.3V1.8V or 3.3VreliabilityW/E EndurancepSLC:30KMLC:≥ 3KData preservation period1year @ Life end10years @ initial1year @ Life end10years @ initialPS8229 Series specifications and functional featurescapacity16GB32GBjoggleeMMC 5.1 HS400eMMC 5.1 HS400package153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)Flash Memory64 Layers64 LayersFlash typepSLC/pMLCpMLC/TLCpotencyContinuous Read / Write (MB/s)Up to 280/140Up to 280/220Operating temperature Grade2, Grade3, Industrial±40~105℃/±40~85℃±40~105℃/±40~85℃Core Voltage, (VCC)3.3V3.3VI / O voltage (VCCQ)1.8V or 3.3V1.8V or 3.3VreliabilityW/E EndurancepSLC:30K/TLC/pMLC:≥ 3KTLC/pMLC:≥ 3KData preservation period1year @ Life end10years @ initial1year @ Life end10years @ initialPS8231 Series specifications and functional featurescapacity16GB32GB64GB128GBjoggleeMMC 5.1 HS400eMMC 5.1 HS400eMMC 5.1 HS400eMMC 5.1 HS400package153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)Flash Memory64 Layers64 Layers64 Layers64 LayersFlash typepSLC/TLCpSLC/TLCTLCTLCpotencyContinuous Read / Write (MB/s)Up to 320/250Up to 320/250Up to 320/250Up to 320/250Operating temperature is Grade2 / Grade3 / Industrial±40~105℃/±40~85℃±40~105℃/±40~85℃±40~105℃/±40~85℃±40~105℃/±40~85℃Core Voltage, (VCC)3.3V3.3V3.3V3.3VI / O voltage (VCCQ)1.8V or 3.3V1.8V or 3.3V1.8V or 3.3V1.8V or 3.3VreliabilityW/E EndurancepSLC:40K/TLC:≥ 3KpSLC:40K/TLC:≥ 3KTLC:≥ 3KTLC:≥ 3KData preservation period2year @ Life end10years @ initial2year @ Life end10years @ initial2year @ Life end10years @ initial2year @ Life end10years @ initial
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PS8317 UFS 2.2 Series specifications and functional featurescapacity64GB128GB256GBjoggleHS-G3x2 UFS 2.2HS-G3x2 UFS 2.2HS-G3x2 UFS 2.2package153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)Flash Memory176 Layers176 Layers176 LayersFlash typeTLCTLCTLCpotencyContinuous Read / Write (MB/s)Up to R800/W400Up to R1000/W800Up to R1000/W950Speed up the write-in device dimensions2GB4GB8GBHost performance boosterHPB2.0HPB2.0HPB2.0Operating temperature: Grade2 / Grade3 / Industrial±40~105℃/±40~85℃±40~105℃/±40~85℃±40~105℃/±40~85℃Core Voltage, (VCC)3.3V3.3V3.3VI / O voltage (VCCQ)1.8V1.8V1.8VreliabilityW/E EnduranceTLC：≥ 3KTLC：≥ 3KTLC：≥ 3KData preservation period1year @ Life end10years @ initial1year @ Life end10years @ initial1year @ Life end10years @ initialPS8317 UFS 3.1 series specifications and functional featurescapacity64GB128GB256GBjoggleHS-G4x2 UFS 3.1HS-G4x2 UFS 3.1HS-G4x2 UFS 3.1package153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)153 Ball(11.5x13x1.0mm)Flash Memory176 Layers176 Layers176 LayersFlash typeTLCTLCTLCpotencyContinuous Read / Write (MB/s)Up to R800/W420Up to R1500/W800Up to R1650/W1100Speed up the write-in device dimensions2GB4GB8GBHost performance boosterHPB2.0HPB2.0HPB2.0Operating temperature: Grade2 / Grade3 / Industrial±40~105℃/±40~85℃±40~105℃/±40~85℃±40~105℃/±40~85℃Core Voltage, (VCC)2.5V2.5V2.5VI / O voltage (VCCQ)1.2V1.2V1.2VreliabilityW/E EnduranceTLC：≥ 3KTLC：≥ 3KTLC：≥ 3KData preservation period1year @ Life end10years @ initial1year @ Life end10years @ initial1year @ Life end10years @ initialEmbedded quotient gauge UFS 2.2 vs. 3.1 specifications are comparedUFS 2.2UFS 3.1master controlPS8317PS8318joggleHS-G3x2 UFS 2.2HS-G3x2 UFS 3.1Flash MemoryMicron 176L, 3D TLC, 512GbitMicron 176L, 3D TLC, 512Gbitcapacity (GB)64/128/256GB128/256/512GBNAND channel, Maximum transmission rate2ch, 800MT/s2ch, up 1600MT/s or 4ch, up to 800MT/sContinuous read / Write performance (up to)1040/910 MB/s1900/1425 MB/s4K Random Read / Write Performance (up to)120K/175K IOPS200K/235K IOPSEffective Power, (RMS)TBDTBDWrite to the acceleration technologySupportedSupportedHPB 2.0SupportedSupportedPackage typeBGA-153BGA-153size (mm)11.5 x 13.011.5 x 13.0Operating temperature±25°C to 85°C±25°C to 85°CModel number (PartNo.)PSUF22H17-A064SSPSUF22H17-A128SSPSUF22H17-A256SSPSUF31L18-A128SSPSUF31L18-A256SSPSUF31L18-A512SS
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Indasina, a group corporation composed of factories, is committed to a variety of electronic products and the overall customized solutions.
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